A 6-18-GHz Switchless Reconfigurable Dual-Band Dual-Mode PA MMIC Using Coupled-Line-Based Diplexer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Kwangseok | - |
dc.contributor.author | Park, Hongjong | - |
dc.contributor.author | Kim, Minchul | - |
dc.contributor.author | Kim, Junghyun | - |
dc.contributor.author | Kwon, Youngwoo | - |
dc.date.accessioned | 2021-06-22T11:21:20Z | - |
dc.date.available | 2021-06-22T11:21:20Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5090 | - |
dc.description.abstract | In this paper, a switchless dual-band, dual-mode power amplifier (PA) has been developed for multioctave operation. For the switchless dual-band operation, we proposed a new coupled-line-based diplexer structure. The proposed diplexer operates as a balun at high-band frequencies and the coupled line at low-band frequencies. To better understand the proposed diplexer structure, a detailed analysis is performed based on a coupled-line theory. The interstage and output-stage matching networks of the PA are designed by using the proposed diplexer. To maximize the power-added efficiency (PAE) of the designed PA, turn off the unused band PAs and decide the optimum off-state bias condition of transistors. The designed dual-band, dual-mode PA is fabricated with commercial 0.25-mu m GaN HEMT process. The fabricated PA shows over 15-dB small-signal gain at 5-11 GHz in the low-band mode and 9-18 GHz in the high-band mode. The measured average output power and PAE are 35 dBm, 23% in the low-band mode and 37 dBm, 26% in the high-band mode. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 6-18-GHz Switchless Reconfigurable Dual-Band Dual-Mode PA MMIC Using Coupled-Line-Based Diplexer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Junghyun | - |
dc.identifier.doi | 10.1109/TMTT.2018.2879356 | - |
dc.identifier.scopusid | 2-s2.0-85056584069 | - |
dc.identifier.wosid | 000453528100032 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.66, no.12, pp.5685 - 5695 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 66 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 5685 | - |
dc.citation.endPage | 5695 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | GAN | - |
dc.subject.keywordPlus | NETWORK | - |
dc.subject.keywordPlus | MODULE | - |
dc.subject.keywordAuthor | Baluns | - |
dc.subject.keywordAuthor | diplexers | - |
dc.subject.keywordAuthor | dual-band amplifiers | - |
dc.subject.keywordAuthor | GaN monolithic microwave integrated circuit (MMICs) | - |
dc.subject.keywordAuthor | multioctave | - |
dc.subject.keywordAuthor | power amplifiers (PAs) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8536423 | - |
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