A 6-18-GHz Switchless Reconfigurable Dual-Band Dual-Mode PA MMIC Using Coupled-Line-Based Diplexer
- Authors
- Choi, Kwangseok; Park, Hongjong; Kim, Minchul; Kim, Junghyun; Kwon, Youngwoo
- Issue Date
- Dec-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Baluns; diplexers; dual-band amplifiers; GaN monolithic microwave integrated circuit (MMICs); multioctave; power amplifiers (PAs)
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.66, no.12, pp.5685 - 5695
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- Volume
- 66
- Number
- 12
- Start Page
- 5685
- End Page
- 5695
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5090
- DOI
- 10.1109/TMTT.2018.2879356
- ISSN
- 0018-9480
- Abstract
- In this paper, a switchless dual-band, dual-mode power amplifier (PA) has been developed for multioctave operation. For the switchless dual-band operation, we proposed a new coupled-line-based diplexer structure. The proposed diplexer operates as a balun at high-band frequencies and the coupled line at low-band frequencies. To better understand the proposed diplexer structure, a detailed analysis is performed based on a coupled-line theory. The interstage and output-stage matching networks of the PA are designed by using the proposed diplexer. To maximize the power-added efficiency (PAE) of the designed PA, turn off the unused band PAs and decide the optimum off-state bias condition of transistors. The designed dual-band, dual-mode PA is fabricated with commercial 0.25-mu m GaN HEMT process. The fabricated PA shows over 15-dB small-signal gain at 5-11 GHz in the low-band mode and 9-18 GHz in the high-band mode. The measured average output power and PAE are 35 dBm, 23% in the low-band mode and 37 dBm, 26% in the high-band mode.
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