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A 6-18-GHz Switchless Reconfigurable Dual-Band Dual-Mode PA MMIC Using Coupled-Line-Based Diplexer

Authors
Choi, KwangseokPark, HongjongKim, MinchulKim, JunghyunKwon, Youngwoo
Issue Date
Dec-2018
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Baluns; diplexers; dual-band amplifiers; GaN monolithic microwave integrated circuit (MMICs); multioctave; power amplifiers (PAs)
Citation
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.66, no.12, pp.5685 - 5695
Indexed
SCIE
SCOPUS
Journal Title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume
66
Number
12
Start Page
5685
End Page
5695
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5090
DOI
10.1109/TMTT.2018.2879356
ISSN
0018-9480
Abstract
In this paper, a switchless dual-band, dual-mode power amplifier (PA) has been developed for multioctave operation. For the switchless dual-band operation, we proposed a new coupled-line-based diplexer structure. The proposed diplexer operates as a balun at high-band frequencies and the coupled line at low-band frequencies. To better understand the proposed diplexer structure, a detailed analysis is performed based on a coupled-line theory. The interstage and output-stage matching networks of the PA are designed by using the proposed diplexer. To maximize the power-added efficiency (PAE) of the designed PA, turn off the unused band PAs and decide the optimum off-state bias condition of transistors. The designed dual-band, dual-mode PA is fabricated with commercial 0.25-mu m GaN HEMT process. The fabricated PA shows over 15-dB small-signal gain at 5-11 GHz in the low-band mode and 9-18 GHz in the high-band mode. The measured average output power and PAE are 35 dBm, 23% in the low-band mode and 37 dBm, 26% in the high-band mode.
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KIM, JUNG HYUN
ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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