Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates
- Authors
- Han, Ki-Lim; Cho, Hyeon-Su; Ok, Kyung-Chul; Oh, Saeroonter; Park, Jin-Seong
- Issue Date
- Nov-2018
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- InGaZnO; Thin film transistor; Hydrogen; Flexible; Polyimide
- Citation
- ELECTRONIC MATERIALS LETTERS, v.14, no.6, pp.749 - 754
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 14
- Number
- 6
- Start Page
- 749
- End Page
- 754
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/5184
- DOI
- 10.1007/s13391-018-0083-5
- ISSN
- 1738-8090
- Abstract
- Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55V and also the threshold voltage shift under positive bias temperature stress by 2xcompared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs. [GRAPHICS] .
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