Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structuresopen access
- Authors
- Oh, Jeong-Tak; Lee, Sang-Youl; Moon, Yong-Tae; Moon, Ji Hyung; Park, Sunwoo; Hong, Ki Yong; Song, Ki Young; Oh, Chan-Hyoung; Shim, Jong-In; Jeong, Hwan-Hee; Song, June-O; Amano, Hiroshi; Seong, Tae-Yeon
- Issue Date
- Apr-2018
- Publisher
- Optical Society of America
- Citation
- Optics Express, v.26, no.9, pp.11194 - 11200
- Indexed
- SCIE
SCOPUS
- Journal Title
- Optics Express
- Volume
- 26
- Number
- 9
- Start Page
- 11194
- End Page
- 11200
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/6294
- DOI
- 10.1364/OE.26.011194
- ISSN
- 1094-4087
- Abstract
- We investigated the optical and electrical properties of red AlGaInP light-emitting diodes (LEDs) as functions of chip size, p-cladding layer thickness, and the number of multi-quantum wells (MQWs). External quantum efficiency (EQE) decreased with decreasing chip size. The ideality factor gradually increased from 1.47 to 1.95 as the chip size decreased from 350 mu m to 15 mu m. This indicates that the smaller LEDs experienced larger carrier loss due to Shockley-Read-Hall nonradiative recombination at sidewall defects. S parameter, defined as partial derivative lnL/partial derivative lnI, increased with decreasing chip size. Simulations and experimental results showed that smaller LEDs with 5 pairs of MQWs had over 30% higher IQE at 5 A/cm(2) than the LED with 20 pairs of MQWs. These results show that the optimization of the number of QWs is needed to obtain maximum EQE of micro-LEDs. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
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