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Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han, Dong-Pyo | - |
| dc.contributor.author | Shim, Jong-In | - |
| dc.contributor.author | Shin, Dong-Soo | - |
| dc.date.accessioned | 2021-06-22T12:21:32Z | - |
| dc.date.available | 2021-06-22T12:21:32Z | - |
| dc.date.created | 2021-01-21 | - |
| dc.date.issued | 2018-02 | - |
| dc.identifier.issn | 0018-9197 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/6787 | - |
| dc.description.abstract | Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) are studied via photoluminescence, temperature-dependent electroluminescence spectra, and numerical simulations. Employing a dichromatic LED device, we demonstrate that the carrier recombination rate should be considered playing an important role in determining the carrier distribution in the MQW active region, not just the simple hole characteristics such as low mobility and large effective mass. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
| dc.contributor.affiliatedAuthor | Shin, Dong-Soo | - |
| dc.identifier.doi | 10.1109/JQE.2018.2790440 | - |
| dc.identifier.scopusid | 2-s2.0-85040535535 | - |
| dc.identifier.wosid | 000422928900001 | - |
| dc.identifier.bibliographicCitation | IEEE Journal of Quantum Electronics, v.54, no.1, pp.1 - 7 | - |
| dc.relation.isPartOf | IEEE Journal of Quantum Electronics | - |
| dc.citation.title | IEEE Journal of Quantum Electronics | - |
| dc.citation.volume | 54 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 7 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Quantum Science & Technology | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | EFFICIENCY DROOP | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
| dc.subject.keywordPlus | TEMPERATURE | - |
| dc.subject.keywordAuthor | Light-emitting diodes | - |
| dc.subject.keywordAuthor | carrier distribution | - |
| dc.subject.keywordAuthor | multiple quantum well | - |
| dc.subject.keywordAuthor | recombination rate | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8248775 | - |
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)