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Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Authors
- Han, Dong-Pyo; Shim, Jong-In; Shin, Dong-Soo
- Issue Date
- Feb-2018
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Light-emitting diodes; carrier distribution; multiple quantum well; recombination rate
- Citation
- IEEE Journal of Quantum Electronics, v.54, no.1, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE Journal of Quantum Electronics
- Volume
- 54
- Number
- 1
- Start Page
- 1
- End Page
- 7
- ISSN
- 0018-9197
- Abstract
- Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) are studied via photoluminescence, temperature-dependent electroluminescence spectra, and numerical simulations. Employing a dichromatic LED device, we demonstrate that the carrier recombination rate should be considered playing an important role in determining the carrier distribution in the MQW active region, not just the simple hole characteristics such as low mobility and large effective mass.
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)