Investigation of electrical performance and operation stability of RF-sputtered InSnZnO thin film transistors by oxygen-ambient rapid thermal annealing
- Authors
- Maeng, Seohyun; Kim, Hyunjin; Choi, Gisang; Choi, Youngjoon; Oh, Saeroonter; Kim, Jaekyun
- Issue Date
- Dec-2020
- Publisher
- IOP PUBLISHING LTD
- Keywords
- sputter process; indium-tin-zinc-oxide; oxygen vacancy; oxygen control; rapid thermal annealing
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.12, pp 1 - 10
- Pages
- 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 35
- Number
- 12
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/736
- DOI
- 10.1088/1361-6641/abbc8f
- ISSN
- 0268-1242
1361-6641
- Abstract
- We investigated the electrical properties and operational stability of amorphous indium-tin-zinc-oxide (a-ITZO) thin-film transistors (TFTs). We fabricated the a-ITZO TFTs using deposition by radio frequency sputtering at room temperature followed by a rapid thermal annealing (RTA) process at different temperatures and oxygen pressure (P-O2). This is a more practical annealing route compared to a conventional furnace. Based on film densification and oxygen vacancy optimization, the a-ITZO TFTs exhibited 9.8 cm(2) Vs(-1), 0.82 V/decade and 1.39 V, for saturation mobility, sub-threshold swing and threshold voltage, respectively. Operation stability tests and hysteresis behavior of a-ITZO TFTs suggest that oxygen vacancy concentration of a-ITZO thin films gradually decreases under higher P-O2, consequently affecting the threshold voltage and the shift seen after a gate bias stress test. This observation suggests that gate bias stress and hysteresis stability of an a-ITZO device is due to the effect of oxygen-controlled pressure in the RTA process. This a-ITZO TFTs electrical characterization qualitatively coincides with x-ray photoelectron spectroscopic analyses of oxygen vacancy concentration in a-ITZO thin films. Thus, our systematic a-ITZO thin film optimization using the oxygen-ambient RTA process is a practical basis for high-performance amorphous oxide semiconductor TFT post-annealing methods.
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