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Silicon atomic layer etching by two-step plasma process consisting of oxidation and modification to form (NH4)2SiF6, and its sublimation

Authors
Song, Eun JinKim, Ji HyeKwon, Jung DaeKwon, Se HunAhn, Ji-Hoon
Issue Date
Sep-2018
Publisher
Japan Society of Applied Physics
Citation
Japanese Journal of Applied Physics, v.57, no.10, pp.1 - 5
Indexed
SCIE
Journal Title
Japanese Journal of Applied Physics
Volume
57
Number
10
Start Page
1
End Page
5
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/7896
DOI
10.7567/JJAP.57.106505
ISSN
0021-4922
Abstract
The process of precise silicon etching on the atomic scale was investigated by examining the formation of an (NH4)2SiF6 thin film as an intermediate phase followed by the removal of this layer by sublimation. An amorphous (NH4)2SiF6 thin film was formed on a Si substrate via a two-step plasma process consisting of an oxidation step involving an O2 plasma and a modification step to form an (NH4)2SiF6 thin film using an NH3/NF3 plasma, where the formed thin film was removed by a sublimation process. Because the thickness of the (NH4)2SiF6 thin film could be linearly controlled by altering the number of two-step plasma process cycles, the etching depth could be successfully controlled on the sub-nanometer scale. © 2018 The Japan Society of Applied Physics.
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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