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Metal Surface Chemical Composition and Morphology

Authors
Park, Jin-GooPaluvai, Nagarjuna R.Venkatesh, R.Prasanna
Issue Date
Dec-2017
Publisher
Elsevier Inc.
Keywords
Aluminum; Copper; Metallization; Passivated metals; Passivated surfaces; Surface morphology; Tungsten and cobalt
Citation
Handbook of Silicon Wafer Cleaning Technology, pp 579 - 618
Pages
40
Indexed
SCOPUS
Journal Title
Handbook of Silicon Wafer Cleaning Technology
Start Page
579
End Page
618
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/7938
DOI
10.1016/B978-0-323-51084-4.00010-1
ISSN
0000-0000
Abstract
Metallization is one of the critical steps in microelectronic fabrication industries in which metals undergo various processing techniques such as deposition, polishing, and cleaning. Metals may undesirably diffuse into active device regions or corrode during various stages of processing, thus passivation of these metal surfaces is strongly recommended. The selection of a suitable passivating agent is necessary, especially during the polishing and cleaning processes to control contamination issues that may occur on the metal surface. This chapter is divided into four main sections for the four key metals found in semiconductor manufacturing: aluminum, copper, tungsten, and cobalt. Because the passivation process during polishing and cleaning is strongly influenced by the surface morphology, the microstructure and texture of as-deposited metals obtained with various deposition techniques are discussed. Then, the passivation process using wet chemistry and the resulting surface chemistry of passivated surfaces are presented. Finally, the different contamination issues of passivated metals and the cleaning processes employed to overcome the contamination are outlined. © 2018 Elsevier Inc. All rights reserved.
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Park, Jin Goo
ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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