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Study of TID effects on one row hammering using gamma in DDR4 SDRAMs
- Issue Date
- Mar-2018
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- DDR4 SDRAM; one row hammering; retention time; total ionizing dose (TID)
- Citation
- IEEE International Reliability Physics Symposium Proceedings, v.2018, pp PSE.21 - PSE.25
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE International Reliability Physics Symposium Proceedings
- Volume
- 2018
- Start Page
- PSE.21
- End Page
- PSE.25
- ISSN
- 1541-7026
1938-1891
- Abstract
- This paper investigates the Total Ionizing Dose (TID) effect on DDR4 SDRAM, using 60Co γ-rays. Although retention time degraded with 830 Gy(Si) exposure, no retention errors were observed at the retention time of 64-ms and temperature of 80 °C. Unlike retention time degradation, the significant degradation in one-row hammering threshold was observed. The threshold was reduced by up to 113 k with tRP 53.75 ns-67% reduction from pre-irradiation values. © 2018 IEEE.
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Related Researcher
- Baeg, Sanghyeon
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)