Spalling of Thin Si Layer via Electroless and Electrodeposit-Assisted Stripping (E(2)AS) with All-Wet Process for Fabrication of Low-Cost Flexible Single-Crystalline Si Solar Cell
- Authors
- Yang, Changyol; Moon, Kyounghoon; Song, Jae-Won; Kim, Jiwon; Lee, Jung-Ho; Lim, Jae-Hong; Yoo, Bongyoung
- Issue Date
- Apr-2018
- Publisher
- Electrochemical Society, Inc.
- Keywords
- SILICON; FILMS; ACTIVATION; DEPOSITION; EFFICIENCY; STRESS; ectrodeposition; solar cell; thin Si layer
- Citation
- Journal of the Electrochemical Society, v.165, no.5, pp.D243 - D249
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of the Electrochemical Society
- Volume
- 165
- Number
- 5
- Start Page
- D243
- End Page
- D249
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/8003
- DOI
- 10.1149/2.1341805jes
- ISSN
- 0013-4651
- Abstract
- A novel method using an all-wet process to reduce the cost of material in Si-based devices is described, called the electroless and electrodeposit-assisted stripping (E(2)AS) process. In this approach, a highly adhesive electroless Ni nanorod seed layer is formed on the Si substrate in place of a conventional high-cost physical vapor deposition (PVD) process. Then, a highly stressed Ni film is electrodeposited as the stress layer for lift-off of the Si thin film. Using the E2AS method, a thin Si film can be repetitively detached from a Si substrate without kerf loss, reducing the solar cell manufacturing cost. (C) 2018 The Electrochemical Society.
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