Device Scalability of InGaZnO TFTs for Next-Generation Displays
- Authors
- Oh, Saeroonter; Kim, Su hyun; Kim, Mingoo; Yu, Sangmin; Choi, Youngjoon; Park, Joon seok; Lim, Jun hyung
- Issue Date
- Oct-2020
- Publisher
- Electrochemical Society
- Citation
- ECS Transactions, v.98, no.7, pp.47 - 54
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 98
- Number
- 7
- Start Page
- 47
- End Page
- 54
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/819
- DOI
- 10.1149/09807.0047ecst
- ISSN
- 1938-5862
- Abstract
- Device scaling of thin-film transistors has only recently gained attention, as the need has grown for shorter channel lengths in hybrid integration applications as well as a performance enhancer in future displays. In this study, we study the device scalability of shortchannel top-gate oxide TFTs down to 1 mm, with particular focus on the carrier profile at the channel edges. We propose a carrier profile extraction method by utilizing comprehensive simulation fitting of the effective channel length, threshold voltage roll-off to the measured and extracted values. We find that the effective channel length plays an important role at short-channel lengths, and the scalability can be improved by adjusting the process-dependent carrier concentration profile.
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