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Write Recovery Time Degradation by Thermal Neutrons in DDR4 DRAM Components Go to Link

Oh, Hyeongseok; Chun, Myungsun; Lee, Jiwon; Wen, Shi-Jie; Yu, Nick; Park, Byung-Gun; Baeg, Sanghyeon

ArticleIssue Date2023CitationIEEE International Reliability Physics Symposium Proceedings, v.2023-March, pp.1 - 6PublisherIEEE

SCIESCOPUS

Hybrid Partitioned SRAM-Based Ternary Content Addressable Memory Go to Link

Ullah, Zahid; Ilgon, Kim; Baeg, Sanghyeon

ArticleIssue Date2012CitationIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.59, no.12, pp.2969 - 2979PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

Signal characteristic and test exploitation for intermittent nanometer-scale cracks Go to Link

Lee, Hosung; Baeg, Sanghyeon

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.84, pp.26 - 36PublisherPERGAMON-ELSEVIER SCIENCE LTD

SCIESCOPUS

Soft error tolerant Content Addressable Memories (CAMs) using error detection codes and duplication Go to Link

Maestro, Juan Antonio; Reviriego, Pedro; Baeg, Sanghyeon; Wen, ShiJie; Wong, Richard

ArticleIssue Date2013CitationMICROPROCESSORS AND MICROSYSTEMS, v.37, no.8, pp.1103 - 1107PublisherELSEVIER

SCIESCOPUS

Study of proton radiation effect to row hammer fault in DDR4 SDRAMs Go to Link

Lim, Chulseung; Park, Kyungbae; Bak, Geunyong; Yun, Donghyuk; Park, Myungsang; Baeg, Sanghyeon; Wen, Shi-Jie; Wong, Richard

ArticleIssue Date2018CitationMICROELECTRONICS RELIABILITY, v.80, pp.85 - 90PublisherPERGAMON-ELSEVIER SCIENCE LTD

SCIESCOPUS

A Quatro-Based 65-nm Flip-Flop Circuit for Soft-Error Resilience Go to Link

Li, Y. -Q.; Wang, H. -B.; Liu, R.; Chen, L.; Nofal, I.; Shi, S. -T.; He, A. -L; Guo, G.; Baeg, S. H.; Wen, S. -J., et al.

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.64, no.6, pp.1554 - 1561PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation Go to Link

Khan, Saqib Ali; Lim, Chulseung; Bak, Geunyong; Baeg, Sanghyeon; Lee, Soonyoung

ArticleIssue Date2017CitationMICROELECTRONICS RELIABILITY, v.69, pp.100 - 108PublisherPERGAMON-ELSEVIER SCIENCE LTD

SCIESCOPUS

Evaluation of SEU Performance of 28-nm FDSOI Flip-Flop Designs Go to Link

Wang, H. -B.; Kauppila, J. S.; Lilja, K.; Bounasser, M.; Chen, L.; Newton, M.; Li, Y. -Q.; Liu, R.; Bhuva, B. L.; Wen, S. -J., et al.

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON NUCLEAR SCIENCE, v.64, no.1, pp.367 - 373PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

SCIESCOPUS

Temporal and frequency characteristic analysis of margin-related failures caused by an intermittent nano-scale fracture of the solder ball in a BGA package device Go to Link

Lee, Hosung; Baeg, Sanghyeon; Hua, Nelson; Wen, ShiJie

ArticleIssue Date2017CitationMICROELECTRONICS RELIABILITY, v.69, pp.88 - 99PublisherPERGAMON-ELSEVIER SCIENCE LTD

SCIESCOPUS

Resource-Efficient SRAM-Based Ternary Content Addressable Memory Go to Link

Ahmed, Ali; Park, Kyungbae; Baeg, Sanghyeon

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.25, no.4, pp.1583 - 1587PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

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