The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
- Authors
- Shin, Yeonwoo; Kim, Sang Tae; Kim, Kuntae; Kim, Mi Young; Oh, Saeroonter; Jeong, Jae Kyeong
- Issue Date
- Sep-2017
- Publisher
- NATURE PUBLISHING GROUP
- Keywords
- THIN-FILM-TRANSISTOR; SEMICONDUCTOR; SI; FABRICATION; DISPLAYS
- Citation
- SCIENTIFIC REPORTS, v.7, no.1, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 7
- Number
- 1
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/8973
- DOI
- 10.1038/s41598-017-11461-0
- ISSN
- 2045-2322
- Abstract
- High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 600 degrees C or higher, which is not suitable for displays using a glass substrate. The crystallization temperature is reduced when in contact with a Ta layer, where partial crystallization at the IGZO back-channel occurs with annealing at 300 degrees C, while complete crystallization of the active layer occurs at 400 degrees C. The field-effect mobility is significantly boosted to 54.0 cm(2)/V.s for the IGZO device with a metal-induced polycrystalline channel formed at 300 degrees C compared to 18.1 cm(2)/V.s for an amorphous IGZO TFT without a catalytic layer. This work proposes a facile and effective route to enhance device performance by crystallizing the IGZO layer with standard annealing temperatures, without the introduction of expensive laser irradiation processes.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.