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The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

Authors
Shin, YeonwooKim, Sang TaeKim, KuntaeKim, Mi YoungOh, SaeroonterJeong, Jae Kyeong
Issue Date
Sep-2017
Publisher
NATURE PUBLISHING GROUP
Keywords
THIN-FILM-TRANSISTOR; SEMICONDUCTOR; SI; FABRICATION; DISPLAYS
Citation
SCIENTIFIC REPORTS, v.7, no.1, pp.1 - 10
Indexed
SCIE
SCOPUS
Journal Title
SCIENTIFIC REPORTS
Volume
7
Number
1
Start Page
1
End Page
10
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/8973
DOI
10.1038/s41598-017-11461-0
ISSN
2045-2322
Abstract
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 600 degrees C or higher, which is not suitable for displays using a glass substrate. The crystallization temperature is reduced when in contact with a Ta layer, where partial crystallization at the IGZO back-channel occurs with annealing at 300 degrees C, while complete crystallization of the active layer occurs at 400 degrees C. The field-effect mobility is significantly boosted to 54.0 cm(2)/V.s for the IGZO device with a metal-induced polycrystalline channel formed at 300 degrees C compared to 18.1 cm(2)/V.s for an amorphous IGZO TFT without a catalytic layer. This work proposes a facile and effective route to enhance device performance by crystallizing the IGZO layer with standard annealing temperatures, without the introduction of expensive laser irradiation processes.
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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