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2. Conference Papers(COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 2. Conference Papers)1,735

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Collection's Items (Sorted by Issue Date in Descending order): 1061 to 1080 of 1735

X-ray imaging from various carbon-nanotube-based cold cathodes

박진석

ConferenceIssue Date2008PlaceSitges, Spain
Accuracy Enhancement of a Surgical Robot System using a Bi-Planar Fluoroscopy

이병주

ConferenceIssue Date2008
Coverage 측면에서의 cooperative communication - OSTBC relaying

김동우

ConferenceIssue Date2008Place서울 한국과학기술회관
Growth temperature dependence of the initial growth mode of GaSb/Si(100) grown by MBE

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Structural and optical properties of AlSb/GaSb Superlattices grown on Si(100) substrate

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Growth Mode Analysis of InN Grown on AlN BFFER by Molecular Beam Epitaxy

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Effect of Annealing on the Structural and Optical Properties of InN Thin Films Grown on AlN Buffer

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Effect of Nitridation on AlN Thin Films Grown on Si(111)

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Accommodation Mechanism and Photoluminescence of GaN Nanorods Grown by Molecular Beam Epitaxy

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Effect of Thermal Annealing on the Optical Properties of In(Ga) Sb/Al(Ga)Sb Multiquantum Well Grown on Si(100) Substrates

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Condution Band Offset at the InN/GaN Heterojunction by Capacitance Voltage Measurement

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju,Korea
Substrate Dependence of Anisotropic Properties of Gallium Antimonide (GaSb) Grown by Molecular Beam Epitaxy

오재응

ConferenceIssue Date2008CitationISPSA2008PublisherThe Korean Physical SocietyPlaceJeju, Korea
Growth and Electrical Properties of Highly Resistive In:AlAsxSb1-x on Si Substrates

오재응

ConferenceIssue Date2008CitationThe 15th International Conference on Molecular Beam EpitaxyPublisherDepartment of Physics and AstronomyPlaceVANCOUVER, CANADA
Strain evaluation of InN layer grown on AlN/Si(111)

오재응

ConferenceIssue Date2008CitationThe 15th International Conference on Molecular Beam EpitaxyPublisherDepartment of Physics and AstronomyPlaceVANCOUVER, CANADA
Material Properties of Low Defect Al0.6Ga0.4Sb Layers grown on Si Substrates

오재응

ConferenceIssue Date2008CitationThe 15th International Conference on Molecular Beam EpitaxyPublisherDepartment of Physics and AstronomyPlaceVANCOUVER, CANADA
A 6DOF Needle Insertion Manipulator with a Suspended Platform

이병주

ConferenceIssue Date2008PlaceBeiijing
Analysis of a 6DOF parallel mechanism for needle insertion task

Lim, Hoon; Lee, Sang Heon; Yi, Byung-Ju; Kim, Young Soo; Oh, Sung Hoon

ConferenceIssue Date2008
다중센서정보를 이용한 유도기법 연구

이정훈

ConferenceIssue Date2008PlaceKAIST
기구학적 여유 자유도를 지니는 전방향 로봇에 대한 기구학적 해석

이병주

ConferenceIssue Date2008
공중부양 플랫폼을 기반으로 한 병렬현 메커니즘

이병주

ConferenceIssue Date2008
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