Hf-Al-Zn-O 기반의 투명 박막 트랜지스터의 NBIS 안정성 분석

Abstract

Aluminum-zinc-oxide (AZO) and hafnium-aluminum- zinc-oxide (HAZO) thin films were deposited via co-sputtering. Also, thin film transistors (TFTs) using the AZO and HAZO films as the channel layers were fabricated. X-ray photoelectron spectroscopy (XPS) were measured to investigate the effects of Hf-incorporation on AZO films. To analyze the stability phenomena of the fabricated AZO- and HAZO-TFTs, the changes in their transfer characteristics were measured under the light-induced stress (using white LEDs) and negative-bias-illumination-stress (NBIS) conditions. The experimental results confirmed that Hf-doping enhanced the stability of the devices.