Effects of post-annealing treatment on the properties of reactive sputtered cuprous-oxide thin films
- Authors
- Jung, Yu Sup; Kim, Kyung Hwan
- Issue Date
- Sep-2015
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Cuprous oxide; Cu2O; Post-annealing treatment; Reactive sputtering; Facing-targets sputtering
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.67, no.6, pp.1013 - 1017
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 67
- Number
- 6
- Start Page
- 1013
- End Page
- 1017
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10219
- DOI
- 10.3938/jkps.67.1013
- ISSN
- 0374-4884
- Abstract
- The p-type cuprous-oxide (Cu2O) thin films were fabricated by using the reactive sputtering method. As-deposited p-type Cu2O thin films were post-annealed in argon gas ambient. The as-deposited p-type Cu2O thin films exhibited Cu2O (111), Cu2O (220), and Cu2O (200) X-ray diffraction peaks. Increasing the post-annealing temperature in Ar gas resulted in a shifting of the Cu2O (111) and the Cu2O (200) diffraction peaks towards lower and higher angles, respectively. At an annealing temperature of 550 A degrees C, the Cu2O (200) diffraction peaks was strongest. The resistivity, hole concentration and mobility of the p-type Cu2O thin film with an annealing temperature of 550 A degrees C were 179.7 Omega A center dot cm, 1.994 x 10(15) cm(-3) and 17.43 cm(2)/V center dot s, respectively.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전기공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10219)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.