Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
- Authors
- Kim, Sungjun; Jung, Sunghun; Kim, Min-Hwi; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- 25-May-2015
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.106, no.21
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 106
- Number
- 21
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10512
- DOI
- 10.1063/1.4921926
- ISSN
- 0003-6951
- Abstract
- In this letter, a bipolar resistive-switching random-access memory (RRAM) in Ni/Si3N4/SiO2/p(+)-Si structure and its fabrication process are demonstrated. The proposed device with double-layer dielectrics consisting of Si3N4 layer (5 nm) as a resistive switching and SiO2 (2.5 nm) layer for the tunnel barrier is investigated in comparison with that having a single layer of Si3N4. Double-layer cell shows ultra-low power operation under a compliance current (I-COMP) of 500 nA, which ensures the reset current (I-RESET) of sub-1 mu A much lower than that of the single-layer cell. Also, large on/off ratio (similar to 10(5)) has been obtained since the SiO2 layer efficiently suppresses the current in the high-resistance state. Moreover, maximum selectivity in double-layer cell is 122 when 1/2 read bias scheme is applied to the crossbar array. Highly nonlinear I-V characteristics of the double-layer Si3N4-based RRAM cell warrant the realization of selector-free RRAM cell in the crossbar array pursuing higher integration density. (C) 2015 AIP Publishing LLC.
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