Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope
- Authors
- Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Kim, Jin Su; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man
- Issue Date
- May-2015
- Publisher
- SPRINGER SINGAPORE PTE LTD
- Keywords
- Gallium nitride (GaN); Power device; Enhancement mode; Vertical channel; TCAD
- Citation
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.10, no.3, pp.1131 - 1137
- Journal Title
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
- Volume
- 10
- Number
- 3
- Start Page
- 1131
- End Page
- 1137
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10577
- DOI
- 10.5370/JEET.2015.10.3.1131
- ISSN
- 1975-0102
- Abstract
- Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidevvall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.
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