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Switching and conduction mechanism of Cu/Si3N4/Si RRAM with CMOS compatibility
- Authors
- Kim, S.; Jung, S.; Kim, M.-H.; Cho, S.; Lee, J.-H.; Park, B.-G.
- Issue Date
- 2015
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2014 Silicon Nanoelectronics Workshop, SNW 2014
- Journal Title
- 2014 Silicon Nanoelectronics Workshop, SNW 2014
- ISSN
- 0000-0000
- Abstract
- In this work, we fabricated CMOS compatible Cu/Si3N4/Si RRAM, showing good resistive switching. This memory cell is stable for bipolar switching (BS) than unipolar switching (US). Trap-controlled space charge limited current (SCLC) conduction is observed. Low resistance state (LRS) shows semiconducting behavior according to the temperature dependency. © 2014 IEEE.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)