A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis
- Authors
- Seo, Jae Hwa; Yoon, Young Jun; Lee, Hwan Gi; Yoo, Gwan Min; Cho, Eou-Sik; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man
- Issue Date
- Nov-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Series Resistance; Silicon Nanowire (SNW); Radio-Frequency (RF); Off-State Channel Resistance; Device Simulation; Parameter Extraction
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.11, pp.8219 - 8224
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 11
- Start Page
- 8219
- End Page
- 8224
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12144
- DOI
- 10.1166/jnn.2014.9884
- ISSN
- 1533-4880
- Abstract
- This paper presents a new extraction method for source and drain (SID) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of SID series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model. The accuracy of the newly proposed parameter extraction method has been successfully verified by Z(22)- and Y-parameters up to 100 GHz operation frequency.
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