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Working Pressure Dependence of WO3-x Thin Films Prepared by Reactive Facing Targets Sputtering
- Issue Date
- 13-Oct-2014
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- oxygen flow ratio; reactive sputtering; facing-target sputtering; Tungsten oxide; electrochromic; working pressure
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.602, no.1, pp.185 - 192
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 602
- Number
- 1
- Start Page
- 185
- End Page
- 192
- ISSN
- 1542-1406
- Abstract
- Tungsten oxide (WO3-x) thin films for an electrochromic (EC) device were deposited at an oxygen flow ratio [O-2/(Ar + O-2)] of 0.7 using reactive facing-target sputtering with a variable working pressure. The correlation between the WO3-x thin films and EC properties was investigated. The films structural properties were measured by X-ray diffraction; the indium tin oxide diffraction peak was observed in all the films. The electrochemical and optical properties were measured by cyclic voltammetry and UV/Vis spectrometry. The WO3-x thin film obtained at 0.13 Pa displayed a maximum coloration efficiency of 31.42cm(2)/C, which indicated superior EC properties.
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Related Researcher
- Kim, Kyung Hwan
- College of IT Convergence (Department of Electrical Engineering)