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Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors
- Authors
- Kim, Sung Yoon; Seo, Jae Hwa; Yoon, Young Jun; Yoo, Gwan Min; Kim, Young Jae; Eun, Hye Rim; Kang, Hye Su; Kim, Jungjoon; Cho, Seongjae; Lee, Jung-Hee; Kang, In Man
- Issue Date
- Oct-2014
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Junctionless; fin-shaped field-effect transistor (FinFET); short-channel effect (SCE); 3-D device simulation
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.14, no.5, pp.508 - 517
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 14
- Number
- 5
- Start Page
- 508
- End Page
- 517
- ISSN
- 1598-1657
- Abstract
- We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (W-fin) and height (H-fin) of the fin as well as the channel doping concentration (N-ch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)