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Characteristics of Ga-Al Doped Zinc Oxide Thin Films Deposited by Facing Targets Sputtering
- Issue Date
- 2-Sep-2014
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- thin film; GAZO; facing target sputtering; transparent electrode; working pressure
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.600, no.1, pp.56 - 62
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 600
- Number
- 1
- Start Page
- 56
- End Page
- 62
- ISSN
- 1542-1406
- Abstract
- Gallium-aluminum doped zinc oxide (GAZO) thin film is evaluated as an alternative to ITO for use as transparent electrodes for display devices. GAZO transparent conducting thin films were deposited using a facing targets sputtering (FTS) system with a hetero-targets. The FTS system can generate high plasma density, suppress the bombardment of high-energy particles to the substrate, and reduce the working pressure and substrate temperature. The average transmittance achieved with these films was as high as 80% in the visible range. Using a working pressure of 0.4 Pa, the lowest resistivity achieved with the deposited film was 5.342 x 10(-4) omega center dot cm.
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Related Researcher
- Bark, Chung Wung
- College of IT Convergence (Department of Electrical Engineering)