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Fabrication and Characterization of GaN-based Light-emitting Diode (LED) with Triangle-type Structure
- Authors
- Lee, Hwan Gi; Seo, Jae Hwa; Yoon, Young Jun; Kim, Young Jae; Kim, Jungjoon; Cho, Seongjae; Cho, Eou-Sik; Bae, Jin-Hyuk; Lee, Jung-Hee; Kang, In Man
- Issue Date
- 13-Aug-2014
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- external quantum efficiency; triangle-type LED; light emission patterns; light-emitting diode
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.599, no.1, pp.163 - 169
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 599
- Number
- 1
- Start Page
- 163
- End Page
- 169
- ISSN
- 1542-1406
- Abstract
- This study investigated characteristics of the fabricated triangle-type light-emitting diode (T-LED), conventional triangular LED (CT-LED), and conventional square LED (CS-LED). The T-LED is expected to provide uniform current spreading that leads to high output power, low current crowding, and high light extraction in the lateral direction of the LED device, compared to CT-LED and CS-LED. The light extraction of the T-LED in the lateral direction is much higher than that of the CT-LED and the CS-LED due to enhancement of light emission from the sidewalls of the T-LED.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)