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The simulation and analysis of recess-gated GaN/AlGaN MOSFET RF characteristics for green-energy automobile applications
- Authors
- Seo, J.H.; Yoon, Y.J.; Lee, H.G.; Yoo, G.M.; Kim, Y.J.; Kim, S.Y.; Woo, S.Y.; Roh, H.B.; Eun, H.R.; Kang, H.S.; Cho, S.; Lee, J.-H.; Kang, I.M.
- Issue Date
- 2014
- Publisher
- IEEE Computer Society
- Keywords
- Automobile application; GaN/AlGaN; Green energy; MOSFET; silicon substrate; TCAD simulation
- Citation
- Proceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014, pp.762 - 765
- Journal Title
- Proceedings - 2014 6th International Conference on Measuring Technology and Mechatronics Automation, ICMTMA 2014
- Start Page
- 762
- End Page
- 765
- ISSN
- 0000-0000
- Abstract
- A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power loss, and easy circuit design. After the GaN/AlGaN MOSFET device design, the DC and RF characteristics are extracted and analyzed by TCAD simulation process. The Ion of 250 mA/mm, SS of 200 mV/dec, VB of 60 V, fT of 2 GHz, and fmax of 2.5 GHz are obtained. © 2014 IEEE.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)