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Dependence of device performances on fin dimensions in AlGaN/GaN recessed-gate nanoscale FinFET
- Authors
- Yoo, G.M.; Seo, J.H.; Yoon, Y.J.; Kim, Y.J.; Kim, S.Y.; Kang, H.S.; Eun, H.R.; Kwon, R.H.; Jang, Y.I.; Kang, I.M.; Lee, S.M.; Cho, S.
- Issue Date
- 2014
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- 3-D TCAD; fin design; fin-shaped channel; FinFET; GaN; heterostructures; power transistor; recessed gate
- Citation
- Proceedings of the International Symposium on Consumer Electronics, ISCE
- Journal Title
- Proceedings of the International Symposium on Consumer Electronics, ISCE
- ISSN
- 0000-0000
- Abstract
- In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (Ion) and off-state (Ioff) currents are affected by fin geometry and the former showed a more drastic change (250∼1209 mA/mm) compared with the latter (confined to ∼1×10-12 mA/mm order). The design works have been conducted through a three-dimensional (3-D) technology computer-aided design (TCAD). © 2014 IEEE.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)