Effect of substrate temperatures on evaporated In2S3 thin film buffer layers for Cu(In, Ga)Se-2 solar cells
- Authors
- Zhong, Zhao Yang; Cho, Eou Sik; Kwon, Sang Jik
- Issue Date
- 29-Nov-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Cu(In,Ga)Se-2 solar cell; In2S3 buffer layers; Thermal evaporation process; Substrate temperature; Atomic ratio; Optical band gap
- Citation
- THIN SOLID FILMS, v.547, pp.22 - 27
- Journal Title
- THIN SOLID FILMS
- Volume
- 547
- Start Page
- 22
- End Page
- 27
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14115
- DOI
- 10.1016/j.tsf.2013.05.071
- ISSN
- 0040-6090
- Abstract
- For the realization of vacuum in-line process in the fabrication of Cu(In,Ga)Se-2 (CIGS) solar cells, In2S3 thin film buffer layers for CIGS have been deposited on glasses and CIGS layers with a thickness of about 650 angstrom by thermal evaporation process. During the thermal evaporation, the temperature of the substrate was varied from room temperature to 500 degrees C by heating and the grown In2S3 films were investigated and analyzed in terms of the optimized buffer layer for CIGS solar cells. From the results of scanning electron microscope and X-ray diffraction, the In2S3 thin film deposited at a higher substrate temperature showed the larger grain size and the films have amorphous structural characteristics. Although the structural characteristics such as the atomic ratio of In to S and transmittance of the In2S3 thin films were not proportional to temperature, it was possible to obtain the large optical band gap of In2S3 films of about 3.8-3.9 eV enough to be used as the buffer layer of CIGS. (C) 2013 Elsevier B.V. All rights reserved.
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