Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures
- Authors
- Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan
- Issue Date
- Nov-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.11
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 11
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14181
- DOI
- 10.7567/JJAP.52.11NB09
- ISSN
- 0021-4922
- Abstract
- The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O-2/(Ar + O-2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 degrees C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 degrees C indicated amorphous properties, while those annealed above 400 degrees C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm(2)/C for thin film annealed at 200 degrees C. The WO3-x thin film annealed at 200 degrees C showed superior electrochromic properties. (C) 2013 The Japan Society of Applied Physics
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