A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance
- Authors
- Yoon, Young Jun; Seo, Jae Hwa; Cho, Seongjae; Lee, Jong-Ho; Kang, In Man
- Issue Date
- 6-May-2019
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.114, no.18
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 114
- Number
- 18
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1463
- DOI
- 10.1063/1.5090934
- ISSN
- 0003-6951
- Abstract
- A polycrystalline-silicon (poly-Si) dual-gate MOSFET-based one-transistor dynamic random-access memory (1T-DRAM) cell was developed using grain boundary (GB)-induced barrier effects. The program/erase operation of the 1T-DRAM is performed by trapping/detrapping charges in GB traps. The trapped charges cause variations in the grain energy barrier of the storage region, which forms the sensing margin of the 1T-DRAM. The proposed cell achieved a high sensing margin of 4.45 mu A/mu m and a long retention time (>100 ms) at a high temperature of 373 K (100 degrees C). Published under license by AIP Publishing.
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Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
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