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Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation
- Authors
- Lee, Dong Keun; Kim, Min-Hwi; Kim, Tae-Hyeon; Bang, Suhyun; Choi, Yeon-Joon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Apr-2019
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Tunneling barrier layer; Resistive-switching random-access memory; Potentiation; Depression; Synaptic plasticity; Spike rate-dependent plasticity (SRDP)
- Citation
- SOLID-STATE ELECTRONICS, v.154, pp.31 - 35
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 154
- Start Page
- 31
- End Page
- 35
- ISSN
- 0038-1101
- Abstract
- A resistive switching random-access memory (ReRAM) device with TiN/HfO2/SiO2/p(+)-Si stack is analyzed for synaptic behavior. Fabricated RRAM device stack consists of heavily doped p-type silicon bottom electrode (BE), HfO2 as a switching layer, SiO2 as a tunneling barrier layer and TiN as a top electrode (TE). The RRAM cell successfully shows I-V curves including SET and RESET operations in DC sweep mode. By inserting a SiO2 tunneling barrier layer, gradual switching characteristics are obtained by pulse operation. By optimizing the pulse scheme applied to the device, biological synaptic plasticity of long-term potentiation and depression is demonstrated. Finally, spike rate-dependent plasticity (SRDP) learning rule is realized by applying pulses with different frequencies to both terminals of the ReRAM device.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)