Detailed Information
Cited 11 time in 
Cited 11 time in 
Cited 11 time in
Metadata Downloads
Effects of intermediate metal layer on the properties of Ga-Al doped ZnO/metal/Ga-Al doped ZnO multilayers deposited on polymer substrate
- Authors
- Jung, Yu Sup; Kim, Kyung Hwan
- Issue Date
- Oct-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Electronic materials; Multilayers; Thin films; Sputtering
- Citation
- MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.2895 - 2897
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 47
- Number
- 10
- Start Page
- 2895
- End Page
- 2897
- ISSN
- 0025-5408
- Abstract
- Ga-Al doped ZnO/metal/Ga-Al doped ZnO multilayer films were deposited on polyethersulfone (PES) substrate at room temperature. The multilayer films consisted of intermediate Ag metal layers, top and bottom Ga-Al doped ZnO layer. The multilayer with PES substrate had advantages such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, sheet resistances of multilayer showed 9 Omega/sq with 12 nm of Ag metal layer thickness. Average optical transmittance of multilayer film showed 84% in visible range (380-770 nm) with 12 nm of Ag metal layer thickness. Moreover the multilayers showed stable mechanical properties than single-layered Ga-Al doped ZnO sample during the bending test due to the existence of ductile Ag metal layer. (C) 2012 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전기공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Kyung Hwan
- College of IT Convergence (Department of Electrical Engineering)