HfOx-based nano-wedge structured resistive switching memory device operating at sub-mu A current for neuromorphic computing application
- Authors
- Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- May-2020
- Publisher
- IOP PUBLISHING LTD
- Keywords
- gradual-switching; potentiation; depression; RRAM; nano-wedge; 25% tetra-methyl-ammonium hydroxide (TMAH)
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.5
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 35
- Number
- 5
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/27297
- DOI
- 10.1088/1361-6641/ab7656
- ISSN
- 0268-1242
- Abstract
- We fabricated a silicon based nano-wedge resistive switching memory device with the stack of Ti/HfOx/p(+)-Si. By using 25% tetra-methyl-ammonium hydroxide (TMAH) aqueous solution, the anisotropic wet etching process is carried out to minimize the tip structure of the silicon bottom electrode to a width of 4 nm, and the structure was validated through TEM analysis. Due to the minimized device area, low read current levels (mu A) were obtained in the nano-wedge RRAM while the opposites were measured in large size RRAM devices. In addition, the fabricated nano-wedge RRAM exhibited low power consumption during the DC switching process. Additionally, pulse measurement and retention tests were performed to demonstrate the synaptic behaviors of long-term potentiation and depression. Software neural network simulation was followed to test the feasibility of nano-wedge RRAM's array implementation. These results demonstrate the fabricated nano-wedge RRAM devices' potential usage as a synaptic device in neuromorphic computing systems.
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