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Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application

Authors
조성재
Issue Date
26-Sep-2013
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29319
Conference Name
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials
Place
일본
Fukuoka, Japan
metadata.conference.dc.citation.conferenceName
International Conference on Solid State Devices and Materials (SSDM)
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IT융합대학 > 전자공학과 > 2. Conference Papers

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IT (Major of Electronic Engineering)
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