Analysis of tunneling field-effect transistor with germanium source junction using small-signal equivalent circuit
- Authors
- Jung, Yung Hun; Kang, In Man; Cho, Seongjae
- Issue Date
- Dec-2018
- Publisher
- WILEY
- Keywords
- device simulation; germanium; high-frequency parameters; small-signal equivalent circuit; source junction; tunneling field-effect transistor
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.60, no.12, pp.2922 - 2927
- Journal Title
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
- Volume
- 60
- Number
- 12
- Start Page
- 2922
- End Page
- 2927
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/2992
- DOI
- 10.1002/mop.31438
- ISSN
- 0895-2477
- Abstract
- In this study, germanium is used as the source junction material in a tunneling field-effect transistor (TFET) and the Ge-source TFET is analyzed in the perspectives of high-frequency performances. For analyses on the high-frequency parameters, a small-signal equivalent circuit with high credibility and device simulation are operated in cooperation. The errors in capacitances and transconductances, from both approaches, are within 10% up to the terahertz regime. It is found that the Ge-source TFET has smaller gate-to-drain capacitance and tunneling resistance than Si-source device. These features merit make Ge-source TFET more suitable to wide variety of high-speed and low-power applications.
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