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Fabrication Organic Thin Film Transistors with a Al2O3 gate insulator improved by oxygen-ion-beam-assisted depositionFabrication Organic Thin Film Transistors with a Al2O3 gate insulator improved by oxygen-ion-beam-assisted deposition
- Alternative Title
- Fabrication Organic Thin Film Transistors with a Al2O3 gate insulator improved by oxygen-ion-beam-assisted deposition
- Authors
- 권상직
- Issue Date
- 25-Sep-2009
- Place
- 대한민국
부산, Bexco
- metadata.conference.dc.citation.conferenceName
- 2th International Conference on Microelectronics and Plasma Technology
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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