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Fabrication of organic thin film transistor with a Al2O3 gate insulator improved by oxygen-ioin-beam-assisted depositoinFabrication of organic thin film transistor with a Al2O3 gate insulator improved by oxygen-ioin-beam-assisted depositoin
- Alternative Title
- Fabrication of organic thin film transistor with a Al2O3 gate insulator improved by oxygen-ioin-beam-assisted depositoin
- Authors
- 조의식
- Issue Date
- 25-Sep-2009
- Place
- 대한민국
Bexco Convention Center, Busan
- metadata.conference.dc.citation.conferenceName
- The 2th International Conference on Microelectronics and Plasma Technology(ICMAP2009)
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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