A Study on the Laser Direct Etching of Indium-Tin-Oxide-Graphene Multilayer on Glass Substrate

Abstract

An indium-tin-oxide ( ITO)-graphene multilayer was directly patterned using a 1064 nm Q-switched neodymiumdoped yttrium vanadate (Nd:YVO4) laser in a new attempt to improve the fragility and weak adhesion of graphene as well as the conductivity of transparent conductive electrodes ( TCEs) without any degradation in transmittance. The ITO-graphene multilayer exhibited narrower etching patterns than a graphene monolayer due to the higher thermal conductivity of the ITO layer than that of a glass substrate. Raman mapping and spectroscopy of the laser patterns showed selective etching of the graphene onto the ITO at a lower overlap of the laser beams and the incomplete removal of graphite ingredients at a lower laser pulse energy. The ITO-graphene electrode was fabricated via laser patterning with an optimized laser beam condition, and it was possible to determine that it had a higher conductivity than an ITO electrode.