Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model
- Authors
- Kim, Min-Hwi; Kim, Sungjun; Ryoo, Kyung-Chang; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Mar-2018
- Publisher
- SPRINGER
- Keywords
- Circuit model; Bipolar switching; RRAM; Cross-point array; SPICE
- Citation
- JOURNAL OF COMPUTATIONAL ELECTRONICS, v.17, no.1, pp.273 - 278
- Journal Title
- JOURNAL OF COMPUTATIONAL ELECTRONICS
- Volume
- 17
- Number
- 1
- Start Page
- 273
- End Page
- 278
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4026
- DOI
- 10.1007/s10825-017-1116-2
- ISSN
- 1569-8025
- Abstract
- In this study, a simple, reliable, and universal circuit model of bipolar resistive-switching random-access memory (RRAM) is presented for the circuit-level simulation of a high-density cross-point RRAM array. For higher accuracy and reliability, the compact model has been developed to match the measurement data of the fabricated RRAM devices with SiNx and HfOx switching layers showing different reset switching behaviors. In the SPICE simulation, the RRAM cross-point array is virtually realized by embedding the empirically modeled memory cells, by which device performances such as read margin and power consumption in the high-density array are closely investigated.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4026)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.