Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Analysis of SiGe Heterojunction Tunneling Field-Effect Transistor in the Microwave Regime Through Its Small-Signal Equivalent Circuit
- Authors
- Jung, Y.H.; Kang, I.M.; Cho, S.
- Issue Date
- 2018
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- Progress in Electromagnetics Research Symposium, v.2018-August, pp.2550 - 2553
- Journal Title
- Progress in Electromagnetics Research Symposium
- Volume
- 2018-August
- Start Page
- 2550
- End Page
- 2553
- ISSN
- 1559-9450
- Abstract
- In this study, Si 1-x Ge x is used as the source junction material in a tunneling field-effect transistor (TFET)and the device is analyzed in the perspectives of radio-frequency (RF)performances. Using the small-signal equivalent circuit with high accuracy in the RF domain, the errors in capacitances and transconductances have been effectively suppressed below 11 % at 600 GHz. © 2018 The Institute of Electronics, Information and Communication Engineers (IEICE).
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)