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Electrical Performances of InN/GaN Tunneling Field-Effect Transistor

Authors
Cho, Min SuKwon, Ra HeeSeo, Jae HwaYoon, Young JunJang, Young InWon, Chul-HoKim, Jeong-GilLee, JunsooCho, SeongjaeLee, Jung-HeeKang, In Man
Issue Date
Nov-2017
Publisher
AMER SCIENTIFIC PUBLISHERS
Keywords
InN/GaN; Gallium Nitride; Double Gate; Field-Effect Transistor; Power Device; III-Nitride Heterojunction
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.11, pp.8355 - 8359
Journal Title
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume
17
Number
11
Start Page
8355
End Page
8359
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/5500
DOI
10.1166/jnn.2017.15134
ISSN
1533-4880
Abstract
In this paper, we design and analyze the InN/GaN double-gate (DG) tunneling field-effect transistor (TFET) with very steep switching and superb DC and RF characteristics. The proposed device is closely investigated in terms of both DC and RF performances including I-on, I-off, on/off current ratio (I-on/I-off), subthreshold swing (S), cut-off frequency (f(t)), maximum oscillating frequency (f(max)), and Johnson's figure of merit (JFOM) using TCAD simulation. The proposed InN/GaN TFET shows high current drivability, extremely suppressed I-off, and higly sharp switching owing to the effects by the electron well formed by the control gate (CG) in the InN layer. The InN/GaN TFET having a channel length (L-ch) of 50 nm demonstrated maximum I-on = 3.5 mA/mu m, extremely low I-off = 1 x 10(-21) A/mu m, minimum S of 8.8 mV/dec, and the maximum values of f(t) and f(max) are obtained as 100 GHz and 5.5 THz, respectively. In order to confirm the high performances of the devices in the RF operation, JFOM has been calculated and the value extracted from an optimally designed InN/GaN TFET is 1.7 THz.V.
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