Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory
- Authors
- Kim, S.; Kim, D.-B.; Yu, E.; Lee, S.-H.; Cho, S.; Park, B.-G.
- Issue Date
- 2017
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2017 Silicon Nanoelectronics Workshop, SNW 2017, v.2017-January, pp.79 - 80
- Journal Title
- 2017 Silicon Nanoelectronics Workshop, SNW 2017
- Volume
- 2017-January
- Start Page
- 79
- End Page
- 80
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/6706
- DOI
- 10.23919/SNW.2017.8242306
- ISSN
- 0000-0000
- Abstract
- In this study, the effects of nitride trap layer properties on location of charge centroid in charge-trap flash (CTF) memory are closely investigated. In the operations of CTF memories, charges tunnel into the nitride layer through thin oxide, unlike the floating-gate (FG) type flash memory where the charges are stored in the conductive poly-crystalline Si. Deeper understanding of distribution of the trapped charges should be beneficial in setting up an accurate compact model of CTF memory cell, where the charge centroid becomes a very practical means by which a rather large number of trapped electrons can be dealt in the more mathematical manner as a whole electron cloud. The relation between charge centroid and program voltage (VPGM) depending on nitride layer properties is analytically studied. © 2017 JSAP.
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