FTS 장치를 이용한 다양한 공정 조건에서 제작한 ITO 박막의 특성 분석Characteristics of ITO thin films grown under various process condition by using facing target sputtering (FTS) system
- Other Titles
- Characteristics of ITO thin films grown under various process condition by using facing target sputtering (FTS) system
- Authors
- 김상모; 금민종; 김경환
- Issue Date
- 2017
- Publisher
- 한국반도체디스플레이기술학회
- Keywords
- FTS; ITO; oxygen; substrate temperature
- Citation
- 반도체디스플레이기술학회지, v.16, no.1, pp.112 - 115
- Journal Title
- 반도체디스플레이기술학회지
- Volume
- 16
- Number
- 1
- Start Page
- 112
- End Page
- 115
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/7173
- ISSN
- 1738-2270
- Abstract
- ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under 10-4 (Ω-cm).
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Collections - IT융합대학 > 전기공학과 > 1. Journal Articles
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