Thermoelectric transport properties of n-Type Sb-doped (Hf, Zr, Ti)NiSn half-heusler alloys prepared by temperature-regulated melt spinning and spark plasma sintering
- Authors
- Bae, K.W.; Hwang, J.Y.; Kim, S.-I.; Jeong, H.M.; Kim, S.; Lim, J.-H.; Kim, H.-S.; Lee, K.H.
- Issue Date
- Jul-2020
- Publisher
- MDPI AG
- Keywords
- Half-Heusler; Sub-micron grain; Thermal conductivity; Thermoelectric; TiNiSn
- Citation
- Applied Sciences (Switzerland), v.10, no.14
- Journal Title
- Applied Sciences (Switzerland)
- Volume
- 10
- Number
- 14
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78039
- DOI
- 10.3390/app10144963
- ISSN
- 2076-3417
- Abstract
- Hereinwereport a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35 Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1-xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4Wm-1 K-1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01. © 2020 by the authors.
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