Simulation Study on Silicon-Based Floating Body Synaptic Transistor with Short- and Long-Term Memory Functions and Its Spike Timing-Dependent Plasticity
- Authors
- Kim, Hyungjin; Cho, Seongjae; Sun, Min-Chul; Park, Jungjin; Hwang, Sungmin; Park, Byung-Gook
- Issue Date
- Oct-2016
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Neuromorphic system; synaptic transistor; short- and long-term memory; spike timing-dependent plasticity (STDP)
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.657 - 663
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 16
- Number
- 5
- Start Page
- 657
- End Page
- 663
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/7808
- DOI
- 10.5573/JSTS.2016.16.5.657
- ISSN
- 1598-1657
- Abstract
- In this work, a novel silicon (Si) based floating body synaptic transistor (SFST) is studied to mimic the transition from short-term memory to long-term one in the biological system. The structure of the proposed SFST is based on an n-type metal-oxide- semiconductor field-effect transistor (MOSFET) with floating body and charge storage layer which provide the functions of short- and long-term memories, respectively. It has very similar characteristics with those of the biological memory system in the sense that the transition between short- and long-term memories is performed by the repetitive learning. Spike timing-dependent plasticity (STDP) characteristics are closely investigated for the SFST device. It has been found from the simulation results that the connectivity between pre- and post-synaptic neurons has strong dependence on the relative spike timing among electrical signals. In addition, the neuromorphic system having direct connection between the SFST devices and neuron circuits are designed.
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