Sub-100-nA-Operating Si-Compatible Ni/Ti/HfO2/SiO2/Si RRAM Device for High-Density Integration and Low-Power Applications
- Authors
- Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Oct-2016
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- RRAM; HfO2; SiO2; Si CMOS Compatibility; Switching Current; Model
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.10, pp.10247 - 10251
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 16
- Number
- 10
- Start Page
- 10247
- End Page
- 10251
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/7811
- DOI
- 10.1166/jnn.2016.13136
- ISSN
- 1533-4880
- Abstract
- In this study, we examined the switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/Ti/HfO2/SiO2/p+Si structure and its fabrication process for compatibility with complementary metal-oxide-semiconductor (CMOS). The HfO2-based RRAM device embedding SiO2 layer demonstrated ultra-low resistive switching of sub-100-nA. Also, more accurate models are proposed to explain the resistive switching and conduction mechanisms of the device. The SiO2 reduces the switching current as a tunneling barrier and the HfO2 layer plays a primary role in resistive switching by trapping and de-trapping the electrons. Furthermore, a large number of switching cycles with low reset current (41.5-nA) were demonstrated from the results of DC endurance tests.
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