Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures
- Authors
- Cho, Hyojong; Ryu, Ji-Ho; Mahata, Chandreswar; Ismail, Muhammad; Chen, Ying-Chen; Chang, Yao-Feng; Cho, Seongjae; Mikhaylov, Alexey; Lee, Jack C.; Kim, Sungjun
- Issue Date
- Oct-2020
- Publisher
- IOP PUBLISHING LTD
- Keywords
- resistive switching; selector; heterostructure
- Citation
- JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.43
- Journal Title
- JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Volume
- 53
- Number
- 43
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78126
- DOI
- 10.1088/1361-6463/ab9ad9
- ISSN
- 0022-3727
- Abstract
- In this work, we propose a self-rectifying Ni/SiNx/HfO2/p(++)Si resistive memory device to alleviate the sneak-path current occurring in crossbar array. The bilayer (Ni/SiNx/HfO2/p(++)Si) device exhibits a much higher rectification ratio (>10(4)) in the low-resistance state for DC sweep mode and pulse mode than single-layer devices (Ni/SiNx/p(++)Si and Ni/HfO2/p(++)Si). The suppressed current of the bilayer device can be explained by the high Schottky barrier of the HfO(2)layer under a negative bias. The modified read bias scheme in the crossbar array structure ensures a large number of word line (similar to 3971 at a read margin of 10%) using the advantage of the high rectification of the bilayer device. The bilayer device with the proposed read bias scheme is promising for high-density memory applications.
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