Negative Transconductance Heterojunction Organic Transistors and their Application to Full-Swing Ternary Circuits
- Authors
- Yoo, Hocheon; On, Sungmin; Lee, Seon Baek; Cho, Kil Won; Kim, Jae-Joon
- Issue Date
- Jul-2019
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- anti-ambipolar transistor; heterojunction; organic semiconductors; ternary inverter
- Citation
- ADVANCED MATERIALS, v.31, no.29
- Journal Title
- ADVANCED MATERIALS
- Volume
- 31
- Number
- 29
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78556
- DOI
- 10.1002/adma.201808265
- ISSN
- 0935-9648
- Abstract
- Multivalued logic (MVL) computing could provide bit density beyond that of Boolean logic. Unlike conventional transistors, heterojunction transistors (H-TRs) exhibit negative transconductance (NTC) regions. Using the NTC characteristics of H-TRs, ternary inverters have recently been demonstrated. However, they have shown incomplete inverter characteristics; the output voltage (V-OUT) does not fully swing from V-DD to G(ND). A new H-TR device structure that consists of a dinaphtho[2,3-b:2 ',3 '-f]thieno[3,2-b]thiophene (DNTT) layer stacked on a PTCDI-C13 layer is presented. Due to the continuous DNTT layer from source to drain, the proposed device exhibits novel switching behavior: p-type off/p-type subthreshold region /NTC/ p-type on. As a result, it has a very high on/off current ratio (approximate to 10(5)) and exhibits NTC behavior. It is also demonstrated that an array of 36 of these H-TRs have 100% yield, a uniform on/off current ratio, and uniform NTC characteristics. Furthermore, the proposed ternary inverter exhibits full V-DD-to-G(ND) swing of V-OUT with three distinct logic states. The proposed transistors and inverters exhibit hysteresis-free operation due to the use of a hydrophobic gate dielectric and encapsulating layers. Based on this, the transient operation of a ternary inverter circuit is demonstrated for the first time.
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