Top-Split-Gate Ambipolar Organic Thin-Film Transistors
- Authors
- Yoo, Hocheon; Lee, Seon Baek; Lee, Dong-Kyu; Smits, Edsger C. P.; Gelinck, Gerwin H.; Cho, Kilwon; Kim, Jae-Joon
- Issue Date
- May-2018
- Publisher
- WILEY
- Keywords
- ambipolar organic transistors; ambipolar semiconductors; complementary electronics; multigate devices
- Citation
- ADVANCED ELECTRONIC MATERIALS, v.4, no.5
- Journal Title
- ADVANCED ELECTRONIC MATERIALS
- Volume
- 4
- Number
- 5
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78641
- DOI
- 10.1002/aelm.201700536
- ISSN
- 2199-160X
- Abstract
- Split-gate ambipolar organic transistor technology is gaining interests as a practical solution for the implementation of complementary transistors. It is known that conventional ambipolar transistors suffer from poor DC gain, noise margin, and high power consumption, as they do not have a well-defined off-state region. A split-gate device structure enables ambipolar transistors operating in a controlled unipolar mode (both p-type and n-type), resulting in superior inverter characteristics. A key challenge in previously reported split-gate ambipolar organic thin-film transistors is the strong current-voltage instabilities due to charge trapping at the dielectric interface. Here, the first split-gate ambipolar organic transistors with top-gate/bottom-contact structure are demonstrated. Compared to the previous split-gate devices, the top-split-gate ambipolar organic transistor exhibits superior electrical properties. The proposed device shows hysteresis-free I-V characteristics as well as higher bias stress stability. Furthermore, the complementary inverter circuit using the proposed transistors is also demonstrated, which results in a higher output swing and DC gain compared to the baseline ambipolar inverter.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/78641)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.